| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AM-140PIN | 10-200 MHz, high performance amplifier, 29 dB gain | M-A-COM---manufacturer-of-RF | FP | 10 | -55°C | 85°C | 255 K |
| AMC-140SMA | 10-200 MHz, high performance amplifier, 29 dB gain | M-A-COM---manufacturer-of-RF | - | 10 | -55°C | 85°C | 255 K |
| IRF1407 | HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.0078 Ohm, ID = 130A. | International-Rectifier | - | 3 | -55°C | 175°C | 127 K |
| IRF1407L | HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.0078 Ohm, ID = 100A. | International-Rectifier | - | 3 | -55°C | 175°C | 159 K |
| IRF1407S | HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.0078 Ohm, ID = 100A. | International-Rectifier | DDPak | 3 | -55°C | 175°C | 159 K |
| IRF1407S | HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.0078 Ohm, ID = 100A. | International-Rectifier | DDPak | 3 | -55°C | 175°C | 159 K |
| IRFBA1404P | HEXFET power MOSFET. VDSS = 40V, RDS(on) = 3.7mOhm, ID = 206A | International-Rectifier | - | 3 | -55°C | 150°C | 115 K |
| IRFBA1405P | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 5.0mOhm, ID = 174A | International-Rectifier | - | 3 | -40°C | 175°C | 238 K |
| IRFP140N | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.052 Ohm, ID = 33A | International-Rectifier | - | 3 | -55°C | 175°C | 158 K |
| IRFP9140N | HEXFET power MOSFET. VDSS = -100 V, RDS(on) = 0.117 Ohm, ID = -23 A | International-Rectifier | - | 3 | -55°C | 175°C | 142 K |
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