Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2SK1432 | N-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2063 | 3 | - | - | 89 K |
2SK1433 | N-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2056 | 3 | - | - | 87 K |
2SK1434 | N-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2056 | 3 | - | - | 88 K |
2SK1435 | N-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2076 | 3 | - | - | 88 K |
2SK1436 | N-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2076 | 3 | - | - | 87 K |
2SK1437 | N-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2077 | 3 | - | - | 87 K |
2SK1438 | N-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2052B | 3 | - | - | 89 K |
2SK1439 | N-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2052B | 3 | - | - | 89 K |
INA143U | High-Speed, Precision, G = 10 or G = 0.1 DIFFERENCE AMPLIFIERS | Burr-Brown-Corporation | 8 | - | -40°C | 85°C | 145 K |
INA143U/2K5 | High-Speed, Precision, G = 10 or G = 0.1 DIFFERENCE AMPLIFIERS | Burr-Brown-Corporation | 8 | - | -40°C | 85°C | 145 K |
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