Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2SA1461-L | Silicon transistor | NEC-Electronics-Inc- | - | - | - | - | 234 K |
2SA1461-T1B | Silicon transistor | NEC-Electronics-Inc- | - | - | - | - | 234 K |
2SA1461-T2B | Silicon transistor | NEC-Electronics-Inc- | - | - | - | - | 234 K |
2SA1462-L | Silicon transistor | NEC-Electronics-Inc- | - | - | - | - | 188 K |
2SA1469 | PNP epitaxial planar silicon transistor, 60V/5A high-speed switching application | SANYO-Electric-Co--Ltd- | 2041 | 3 | - | - | 101 K |
2SB1467 | PNP epitaxial planar silicon transistor, high-current switching application | SANYO-Electric-Co--Ltd- | 2041 | 3 | - | - | 110 K |
2SB1468 | PNP epitaxial planar silicon transistor, 30V/8A high-speed switching application | SANYO-Electric-Co--Ltd- | 2041 | 3 | - | - | 113 K |
2SK1460 | N-channel silicon MOSFET, ultrahigh-speed switching application | SANYO-Electric-Co--Ltd- | 2078B | 3 | - | - | 100 K |
INA146UA | High-Voltage, Programmable Gain Difference Amplifier | Burr-Brown-Corporation | 8 | - | -40°C | 85°C | 129 K |
INA146UA/2K5 | High-Voltage, Programmable Gain Difference Amplifier | Burr-Brown-Corporation | 8 | - | -40°C | 85°C | 129 K |
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