| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PHW14N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | TO247 | 3 | -55°C | 150°C | 27 K |
| PHW14N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT429 | 3 | -55°C | 150°C | 27 K |
| STW14NM50FD | N-CHANNEL 500V 0.32 OHM 12A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 FDMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 649 K |
| STW14NM50FD | N-CHANNEL 500V 0.32 OHM 12A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 FDMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 649 K |
| VNB14NV04 | "OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 510 K |
| VND14NV04 | "OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 510 K |
| VND14NV04-1 | "OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 510 K |
| VNP14NV04 | "OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 510 K |
| VNS14NV04 | "OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 510 K |
| ZCA6H14NDL | Configurable power supply, 600W. AC input. Hotswap with V1 1.8V/70A, V2 3.3V/50A, V3 5V/10A, V5 -1.8V/3A. Low leakage. | distributor | - | - | 0°C | 70°C | 421 K |
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