Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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HGT1S14N36G3VL | 360V, 14A Ignition IGBT | Intersil-Corporation | - | - | - | - | 110 K |
HGT1S14N36G3VLS | 360V, 14A Ignition IGBT | Intersil-Corporation | - | - | - | - | 110 K |
HGTP14N40F3VL | 14A, 400V N-Channel, Voltage Clamping IGBT | Intersil-Corporation | - | - | - | - | 85 K |
L14N1 | Hermetic Silicon Infrared Photosensor. Phototransistor | distributor | - | - | - | - | 249 K |
RFD14N06L | 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 83 K |
RFD14N06LSM | 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 83 K |
RFP14N06 | 14A, 60V, 0.100 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 75 K |
RFP14N06L | 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 83 K |
SPD14N05 | N-channel SIPMOS power transistor | Infineon-formely-Siemens | - | 3 | - | - | 141 K |
SPU14N05 | N-channel SIPMOS power transistor | Infineon-formely-Siemens | - | 3 | - | - | 141 K |
[1] [2] [3] 4 [5] [6] [7] [8] [9] [10] |
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