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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
HGT1S14N36G3VL360V, 14A Ignition IGBTIntersil-Corporation----110 K
HGT1S14N36G3VLS360V, 14A Ignition IGBTIntersil-Corporation----110 K
HGTP14N40F3VL14A, 400V N-Channel, Voltage Clamping IGBTIntersil-Corporation----85 K
L14N1Hermetic Silicon Infrared Photosensor. Phototransistordistributor----249 K
RFD14N06L14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETsIntersil-Corporation----83 K
RFD14N06LSM14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETsIntersil-Corporation----83 K
RFP14N0614A, 60V, 0.100 Ohm, N-Channel Power MOSFETIntersil-Corporation----75 K
RFP14N06L14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETsIntersil-Corporation----83 K
SPD14N05N-channel SIPMOS power transistorInfineon-formely-Siemens-3--141 K
SPU14N05N-channel SIPMOS power transistorInfineon-formely-Siemens-3--141 K
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