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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
L14N2Hermetic Silicon Infrared Photosensor. Phototransistordistributor----249 K
MAX814NCPA+-1% accuracy, low-power, microprocessor supervisory circuit. Reset trip threshold (min) 4.50V (max) 4.60V, push-pull active-low reset output, push-pull active-high reset output, manual reset, power-fail monitor, low-line detector.Maxim-Integrated-ProducsPlastic DIP80°C70°C111 K
MAX814NCSA+-1% accuracy, low-power, microprocessor supervisory circuit. Reset trip threshold (min) 4.50V (max) 4.60V, push-pull active-low reset output, push-pull active-high reset output, manual reset, power-fail monitor, low-line detector.Maxim-Integrated-ProducsSO80°C70°C111 K
MAX814NEPA+-1% accuracy, low-power, microprocessor supervisory circuit. Reset trip threshold (min) 4.50V (max) 4.60V, push-pull active-low reset output, push-pull active-high reset output, manual reset, power-fail monitor, low-line detector.Maxim-Integrated-ProducsPlastic DIP8-40°C85°C111 K
MAX814NESA+-1% accuracy, low-power, microprocessor supervisory circuit. Reset trip threshold (min) 4.50V (max) 4.60V, push-pull active-low reset output, push-pull active-high reset output, manual reset, power-fail monitor, low-line detector.Maxim-Integrated-ProducsSO8-40°C85°C111 K
MAX814NESA+-1% accuracy, low-power, microprocessor supervisory circuit. Reset trip threshold (min) 4.50V (max) 4.60V, push-pull active-low reset output, push-pull active-high reset output, manual reset, power-fail monitor, low-line detector.Maxim-Integrated-ProducsSO8-40°C85°C111 K
MGP14N60EInsulated gate bipolar transistorMotorola-3-55°C150°C125 K
MTW14N50ETMOS E-FET power field effect transistor TO-247 with isolated mounting holeMotorola-4-55°C150°C205 K
MTY14N100ETMOS E-FET power field effect transistorMotorola-3-55°C150°C232 K
S2514NH800V general purpose SCRSGS-Thomson-Microelectronics-3-40°C125°C61 K
SP4414NEBLow cost electroluminescent lamp driverSipex-Corporation----137 K
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