| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CM150DU-12H | 150 Amp IGBT module for high power switching use insolated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 51 K |
| CM150DU-24F | 150A IGBT module for high power switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 73 K |
| CM150DU-24H | 150 Amp IGBT module for high power switching use insolated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 43 K |
| CM150DY-12H | 150 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 47 K |
| CM150DY-24H | 150 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 47 K |
| G65SC150DI-1 | CMOS communications terminal unit (telecommunication microcomputer) | California-Micro-Devices | CERDIP | 88 | -40°C | 85°C | 714 K |
| G65SC150DI-2 | CMOS communications terminal unit (telecommunication microcomputer) | California-Micro-Devices | CERDIP | 88 | -40°C | 85°C | 714 K |
| NJM2150D | Sound enhancement audio processor | New-Japan-Radio-Co--Ltd--JRC | DIP | 20 | -40°C | 85°C | 209 K |
| PM150DSA120 | 100 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 13 | -20°C | 150°C | 62 K |
| QM150DY-HK | 150A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 9 | -40°C | 150°C | 78 K |
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