| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTB15N06E | TMOS E-FET high energy power FET | Motorola | DPAK | 4 | -55°C | 150°C | 231 K |
| MTB15N06V | TMOS V power field effect transistor | Motorola | DPAK | 4 | -55°C | 175°C | 274 K |
| MTD15N06V | TMOS V power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 175°C | 218 K |
| MTD15N06VL | TMOS V power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 175°C | 179 K |
| MTP15N06V | TMOS V power field effect transistor | Motorola | - | 4 | -55°C | 175°C | 163 K |
| MTP15N06VL | TMOS V power field effect transistor | Motorola | - | 4 | -55°C | 175°C | 216 K |
| MTP15N06VL | TMOS V power field effect transistor | Motorola | - | 4 | -55°C | 175°C | 216 K |
| PHP15N06E | 60 V, power MOS transistor | Philips-Semiconductors | TO | 3 | - | - | 54 K |
| PHX15N06E | 60 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 57 K |
| RFD15N06LESM | 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 95 K |
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