Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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HER1601C | High efficiency rectifier. Max recurrent peak reverse voltage 50V, max RMS voltage 35V, max DC blocking voltage 50V. Max average forward recttified current 16.0A at 75degreC. | distributor | - | 3 | -65°C | 150°C | 24 K |
HER1601CS | High efficiency rectifier. Max recurrent peak reverse voltage 50V, max RMS voltage 35V, max DC blocking voltage 50V. Max average forward recttified current 16.0A at 75degreC. | distributor | D2PAK | 3 | -65°C | 150°C | 23 K |
RL1601C | Glass passivated silicon rectifier. Max recurrent peak reverse voltage 50V, max RMS bridge input voltage 35V, max DC blocking voltage 50V. Max average forward rectified current 16.0A at Tc=100degC. | distributor | - | 4 | -65°C | 150°C | 26 K |
RL1601CS | Glass passivated silicon rectifier. Max recurrent peak reverse voltage 50V, max RMS voltage 35V, max DC blocking voltage 50V. Max average forward rectified current 16.0A at Tc=100degC. | distributor | D2PAK | 3 | -65°C | 150°C | 23 K |
SST34HF1601-70-4C-L1P | 16 Mbit concurrent superflash + SRAM combo-memory | Silicon-Storage-Technology-Inc- | LFBGA | 56 | 0°C | 70°C | 486 K |
SST34HF1601-70-4E-L1P | 16 Mbit concurrent superflash + SRAM combo-memory | Silicon-Storage-Technology-Inc- | LFBGA | 56 | -20°C | 85°C | 486 K |
SST34HF1601-70-4E-LFP | 16 Mbit concurrent superflash + SRAM combo-memory | Silicon-Storage-Technology-Inc- | LFBGA | 56 | -20°C | 85°C | 486 K |
SST34HF1601-90-4C-L1P | 16 Mbit concurrent superflash + SRAM combo-memory | Silicon-Storage-Technology-Inc- | LFBGA | 56 | 0°C | 70°C | 486 K |
SST34HF1601-90-4E-L1P | 16 Mbit concurrent superflash + SRAM combo-memory | Silicon-Storage-Technology-Inc- | LFBGA | 56 | -20°C | 85°C | 486 K |
XT2116-1601 | 1600V fast turn-off asymmetric thyristor | distributor | SO28 | 2 | - | - | 30 K |
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