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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
HER1601CHigh efficiency rectifier. Max recurrent peak reverse voltage 50V, max RMS voltage 35V, max DC blocking voltage 50V. Max average forward recttified current 16.0A at 75degreC.distributor-3-65°C150°C24 K
HER1601CSHigh efficiency rectifier. Max recurrent peak reverse voltage 50V, max RMS voltage 35V, max DC blocking voltage 50V. Max average forward recttified current 16.0A at 75degreC.distributorD2PAK3-65°C150°C23 K
RL1601CGlass passivated silicon rectifier. Max recurrent peak reverse voltage 50V, max RMS bridge input voltage 35V, max DC blocking voltage 50V. Max average forward rectified current 16.0A at Tc=100degC.distributor-4-65°C150°C26 K
RL1601CSGlass passivated silicon rectifier. Max recurrent peak reverse voltage 50V, max RMS voltage 35V, max DC blocking voltage 50V. Max average forward rectified current 16.0A at Tc=100degC.distributorD2PAK3-65°C150°C23 K
SST34HF1601-70-4C-L1P16 Mbit concurrent superflash + SRAM combo-memorySilicon-Storage-Technology-Inc-LFBGA560°C70°C486 K
SST34HF1601-70-4E-L1P16 Mbit concurrent superflash + SRAM combo-memorySilicon-Storage-Technology-Inc-LFBGA56-20°C85°C486 K
SST34HF1601-70-4E-LFP16 Mbit concurrent superflash + SRAM combo-memorySilicon-Storage-Technology-Inc-LFBGA56-20°C85°C486 K
SST34HF1601-90-4C-L1P16 Mbit concurrent superflash + SRAM combo-memorySilicon-Storage-Technology-Inc-LFBGA560°C70°C486 K
SST34HF1601-90-4E-L1P16 Mbit concurrent superflash + SRAM combo-memorySilicon-Storage-Technology-Inc-LFBGA56-20°C85°C486 K
XT2116-16011600V fast turn-off asymmetric thyristordistributorSO282--30 K
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