| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1503-160B | Max delay 160 ns, Mechanically variable delay line | distributor | - | 4 | - | - | 49 K |
| M5M29GB160BVP | 16777216-bit CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | -20°C | 85°C | 197 K |
| M5M29GB160BWG | 16777216-bit CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -20°C | 85°C | 197 K |
| M5M29GB160BWG | 16,777,216-bit (1048,576-word by 16-bit) CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | CSP | 48 | -20°C | 85°C | 200 K |
| M5M29GT160BVP | 16777216-bit CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | -20°C | 85°C | 197 K |
| M5M29GT160BVP-80 | 16777216-bit CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | -20°C | 85°C | 229 K |
| M5M29GT160BWG | 16777216-bit CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -20°C | 85°C | 197 K |
| M5M29GT160BWG | 16777216-bit CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -20°C | 85°C | 197 K |
| M5M29GT160BWG | 16,777,216-bit (1048,576-word by 16-bit) CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | CSP | 48 | -20°C | 85°C | 200 K |
| M5M465160BTP-6S | Fast page mode 67108864-bit dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 32 | 0°C | 70°C | 362 K |
| << [28] [29] [30] [31] [32] 33 [34] [35] |
|---|
