Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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M5M29GB161BWG | 16777216-bit CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -20°C | 85°C | 197 K |
M5M29GT161BVP-80 | 16777216-bit CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | -20°C | 85°C | 229 K |
M5M29GT161BWG | 16777216-bit CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -20°C | 85°C | 197 K |
M5M4V16169DRT-10 | 16M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 70 | - | - | 737 K |
M5M4V16169DRT-15 | 16M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 70 | - | - | 737 K |
M5M4V16169DRT-8 | 16M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 70 | - | - | 737 K |
M5M4V16169DTP-10 | 16M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 70 | - | - | 737 K |
M5M4V16169DTP-15 | 16M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 70 | - | - | 737 K |
M5M4V16169DTP-7 | 16M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 70 | - | - | 737 K |
R5323N161B-TR | 150mA 2ch-LDO regulator. Output voltage 1.6V. Mask option B version; with auto discharge function at OFF state. Standardt taping specification TR. | distributor | - | 6 | -40°C | 85°C | 568 K |
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