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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M5M29GB161BWG16,777,216-bit (1048,576-word by 16-bit) CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-GroupCSP48-20°C85°C200 K
M5M29GT161BWG16,777,216-bit (1048,576-word by 16-bit) CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-GroupCSP48-20°C85°C200 K
RF2161PCBA3V W-CDMA power 1900MHz 3V linear power amplifierRF-Micro-Devices-RFMDMP16K01A16-30°C110°C150 K
VG36128161ACMOS synchronous dynamic RAMdistributorTSOP540°C70°C940 K
VG36128161BTCMOS synchronous dynamic RAMdistributorTSOP540°C70°C1 M
VG3617161DT-616Mb CMOS synchronous dynamic RAMdistributorTSOP500°C70°C943 K
VG3617161ET-61.048.576 x 16-bit CMOS synchronous dynamic RAMdistributorTSOP500°C70°C1 M
VG3617161ET-7CMOS synchronous dynamic RAMdistributorTSOP500°C70°C1 M
VG3617161ET-8CMOS synchronous dynamic RAMdistributorTSOP500°C70°C1 M
VG36256161ACMOS synchronous dynamic RAMdistributorTSOP540°C70°C944 K
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