Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
K4E641612B-TC45 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 885 K |
K4E641612B-TC50 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 885 K |
K4E641612B-TC60 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 885 K |
K4E641612B-TL45 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 885 K |
K4E641612B-TL50 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 885 K |
K4E641612B-TL60 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 885 K |
K4E661612B-TL45 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 885 K |
K4E661612B-TL50 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 885 K |
K4E661612B-TL60 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 885 K |
SB16100DC | 100 V, 16 A, D2PAK surface mount schottky barrier rectifier | distributor | D2PAK | 4 | -50°C | 150°C | 148 K |
<< [205] [206] [207] [208] [209] 210 [211] [212] [213] [214] [215] >> |
---|