| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HY57V641620HGLT-5 | 4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 200 MHz | distributor | TSOP II | 54 | 0°C | 70°C | 86 K |
| HY57V641620HGLT-55 | 4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 183 MHz | distributor | TSOP II | 54 | 0°C | 70°C | 86 K |
| HY57V641620HGT-5 | 4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, 200 MHz | distributor | TSOP II | 54 | 0°C | 70°C | 86 K |
| HY57V641620HGT-6 | 4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, 166 MHz | distributor | TSOP II | 54 | 0°C | 70°C | 86 K |
| HY57V641620HGT-7 | 4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, 143 MHz | distributor | TSOP II | 54 | 0°C | 70°C | 86 K |
| HY57V641620HGT-8 | 4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, 125 MHz | distributor | TSOP II | 54 | 0°C | 70°C | 86 K |
| HY57V641620HGT-H | 4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, 133 MHz | distributor | TSOP II | 54 | 0°C | 70°C | 86 K |
| HY57V641620HGT-K | 4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, 133 MHz | distributor | TSOP II | 54 | 0°C | 70°C | 86 K |
| HY57V641620HGT-S | 4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, 100 MHz | distributor | TSOP II | 54 | 0°C | 70°C | 86 K |
| NTE1620 | Integrated circuit. B/W TV video IF amplifier, RF AGC circuit. | distributor | SIP | 9 | -20°C | 70°C | 19 K |
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