Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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HYB3165160AT-40 | 4M x 16bit DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 216 K |
HYB3165160AT-50 | 4M x 16bit DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 216 K |
KTA1658 | PNP transistor for general purpose applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 124 K |
KTA1659 | PNP transistor for high voltage applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 128 K |
KTA1659A | PNP transistor for high voltage applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 128 K |
TISP4165H3BJ | Single Bidirectional Overvoltage Protection | Power-Innovations | SMB | - | - | - | 312 K |
TISP4165H3LM | Single Symmetrical Overvoltage TISP for 2 Wire Protection | Power-Innovations | - | - | - | - | 355 K |
TISP4165H4BJ | Single Bidirectional Overvoltage Protection | Power-Innovations | SMB | - | - | - | 295 K |
TISP4165M3BJ | Single Bidirectional Overvoltage Protection | Power-Innovations | SMB | - | - | - | 317 K |
TISP4165M3LM | Single Symmetrical Overvoltage TISP for 2 Wire Protection | Power-Innovations | - | - | - | - | 358 K |
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