| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IS61VPS10018-166B | 1024K x 18 synchronous pipeline, single-cycle deselect static RAM | distributor | PBGA | 119 | 0°C | 70°C | 165 K |
| IS61VPS10018-166BI | 1024K x 18 synchronous pipeline, single-cycle deselect static RAM | distributor | PBGA | 119 | -40°C | 85°C | 165 K |
| IS61VPS10018-166TQI | 1024K x 18 synchronous pipeline, single-cycle deselect static RAM | distributor | TQFP | 100 | -40°C | 85°C | 165 K |
| IS61VPS51232-166TQ | 512K x 32 synchronous pipeline, single-cycle deselect static RAM | distributor | TQFP | 100 | 0°C | 70°C | 165 K |
| IS61VPS51232-166TQI | 512K x 32 synchronous pipeline, single-cycle deselect static RAM | distributor | TQFP | 100 | -40°C | 85°C | 165 K |
| IS61VPS51236-166B | 512K x 36 synchronous pipeline, single-cycle deselect static RAM | distributor | PBGA | 119 | 0°C | 70°C | 165 K |
| IS61VPS51236-166BI | 512K x 36 synchronous pipeline, single-cycle deselect static RAM | distributor | PBGA | 119 | -40°C | 85°C | 165 K |
| IS61VPS51236-166TQ | 512K x 36 synchronous pipeline, single-cycle deselect static RAM | distributor | TQFP | 100 | 0°C | 70°C | 165 K |
| IS61VPS51236-166TQI | 512K x 36 synchronous pipeline, single-cycle deselect static RAM | distributor | TQFP | 100 | -40°C | 85°C | 165 K |
| K4R271669AN-CG6 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. | Samsung-Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | 3 M |
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