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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M5M4V16169DRT-1016M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP70--737 K
M5M4V16169DRT-1516M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP70--737 K
M5M4V16169DTP-1016M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP70--737 K
M5M4V16169DTP-1516M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP70--737 K
M5M4V16169DTP-716M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP70--737 K
MC33169DTB-2.5GaAs power amplifier support ICMotorolaTSSOP14-40°C85°C206 K
MC33169DTB-4.0GaAs power amplifier support ICMotorolaTSSOP14-40°C85°C206 K
MC74F169D4-stage synchronous bidirectional counterMotorolaSOIC16-55°C125°C119 K
MC74F169D4-stage synchronous bidirectional counterMotorolaSOIC16-55°C125°C119 K
SN74LS169DBCD decade/modulo 16 binary synchronous bi-directional counterMotorolaSOIC160°C70°C272 K
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