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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IS62VV25616L-10M256K x 16 low voltage, 1.8V ultra-low power CMOS static RAMdistributorBGA480°C70°C89 K
IS62VV25616L-70M256K x 16 low voltage, 1.8V ultra-low power CMOS static RAMdistributorBGA480°C70°C89 K
IS62VV25616LL-10M256K x 16 low voltage, 1.8V ultra-low power CMOS static RAMdistributorBGA480°C70°C89 K
IS62VV25616LL-70M256K x 16 low voltage, 1.8V ultra-low power CMOS static RAMdistributorBGA480°C70°C89 K
IS62VV51216LL-70M512K x 16 low voltage, 1.8V ultra-low power CMOS static RAMdistributorBGA480°C70°C87 K
IS62VV51216LL-70MI512K x 16 low voltage, 1.8V ultra-low power CMOS static RAMdistributorBGA48-40°C85°C87 K
IS62VV51216LL-85M512K x 16 low voltage, 1.8V ultra-low power CMOS static RAMdistributorBGA480°C70°C87 K
IS62VV51216LL-85MI512K x 16 low voltage, 1.8V ultra-low power CMOS static RAMdistributorBGA48-40°C85°C87 K
KM416L8031BT-GY128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns.Samsung-Electronic-660°C70°C750 K
KM416L8031BT-GZ128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns.Samsung-Electronic-660°C70°C750 K
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