Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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KM416L8031BT-FZ | 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5ns. | Samsung-Electronic | - | 66 | 0°C | 70°C | 750 K |
KM416L8031BT-G0 | 128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10ns. | Samsung-Electronic | - | 66 | 0°C | 70°C | 750 K |
KM416L8031BT-GY | 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. | Samsung-Electronic | - | 66 | 0°C | 70°C | 750 K |
KM416L8031BT-GZ | 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. | Samsung-Electronic | - | 66 | 0°C | 70°C | 750 K |
TIBPAL16L8-5CFN | HIGH-PERFORMANCE IMPACT-X(TM) PAL(R) CIRCUITS | Texas-Instruments | FN | 20 | - | - | 271 K |
TIBPAL16L8-5CFN | HIGH-PERFORMANCE IMPACT-X(TM) PAL(R) CIRCUITS | Texas-Instruments | FN | 20 | - | - | 271 K |
TIBPAL16L8-5CN | HIGH-PERFORMANCE IMPACT-X(TM) PAL(R) CIRCUITS | Texas-Instruments | N | 20 | - | - | 271 K |
TIBPAL16L8-5CN | HIGH-PERFORMANCE IMPACT-X(TM) PAL(R) CIRCUITS | Texas-Instruments | N | 20 | - | - | 271 K |
TIBPAL16L8-7CFN | HIGH-PERFORMANCE IMPACT-X(TM) PAL(R) CIRCUITS | Texas-Instruments | FN | 20 | - | - | 215 K |
TIBPAL16L8-7CN | HIGH-PERFORMANCE IMPACT-X(TM) PAL(R) CIRCUITS | Texas-Instruments | N | 20 | - | - | 215 K |
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