| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 50S116T-5 | High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA | distributor | TSOP | 50 | 0°C | 70°C | 1 M |
| 50S116T-6 | High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA | distributor | TSOP | 50 | 0°C | 70°C | 1 M |
| 50S116T-7 | High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA | distributor | TSOP | 50 | 0°C | 70°C | 1 M |
| 54S416T-5 | High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA | distributor | TSOP | 54 | 0°C | 70°C | 1 M |
| 54S416T-6 | High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA | distributor | TSOP | 54 | 0°C | 70°C | 1 M |
| 54S416T-7 | High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA | distributor | TSOP | 54 | 0°C | 70°C | 1 M |
| GS71116TP-12 | 12ns 64K x 16 1Mb asynchronous SRAM | distributor | TSOP | 44 | 0°C | 70°C | 220 K |
| GS71116TP-15 | 15ns 64K x 16 1Mb asynchronous SRAM | distributor | TSOP | 44 | 0°C | 70°C | 220 K |
| MT46V32M16TG-8 | 8Meg x 16 x 4banks, CL=2, 133MHz double data rate (DDR) SDRAM | distributor | TSOP | 66 | 0°C | 70°C | 2 M |
| MT46V32M16TG-8L | 8Meg x 16 x 4banks, CL=2, 133MHz double data rate (DDR) SDRAM | distributor | TSOP | 66 | 0°C | 70°C | 2 M |
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