Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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CY7C1316V18-167BZC | 18-Mb DDR-II SRAM two-word burst architecture, 167MHz | Cypress-Semiconductor | FBGA | 165 | 0°C | 70°C | 442 K |
CY7C1316V18-200BZC | 18-Mb DDR-II SRAM two-word burst architecture, 200MHz | Cypress-Semiconductor | FBGA | 165 | 0°C | 70°C | 442 K |
CY7C1316V18-250BZC | 18-Mb DDR-II SRAM two-word burst architecture, 250MHz | Cypress-Semiconductor | FBGA | 165 | 0°C | 70°C | 442 K |
CY7C1316V18-300BZC | 18-Mb DDR-II SRAM two-word burst architecture, 300MHz | Cypress-Semiconductor | FBGA | 165 | 0°C | 70°C | 442 K |
KM416V1000CJ-6 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 767 K |
KM416V1000CJL-6 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 767 K |
KM416V1200CJ-6 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 767 K |
WED9LC6416V1512BC | SSRAM access 150MHz; 3.3V power supply; 128K x 32 SSRAM/4M x 32 SDRAM. External memory solution for texas instruments TMS320C6000 DSP | distributor | BGA | 153 | - | - | 370 K |
WED9LC6416V1610BC | SSRAM access 200MHz; 3.3V power supply; 128K x 32 SSRAM/4M x 32 SDRAM. External memory solution for texas instruments TMS320C6000 DSP | distributor | BGA | 153 | - | - | 370 K |
WED9LC6416V1612BC | SSRAM access 200MHz; 3.3V power supply; 128K x 32 SSRAM/4M x 32 SDRAM. External memory solution for texas instruments TMS320C6000 DSP | distributor | BGA | 153 | -40°C | 85°C | 370 K |
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