| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GS8170LW18C-250 | 250MHz 1M x 18 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | 0°C | 70°C | 877 K |
| GS8170LW18C-250I | 250MHz 1M x 18 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | -40°C | 85°C | 877 K |
| GS8170LW18C-300 | 300MHz 1M x 18 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | 0°C | 70°C | 877 K |
| GS8170LW18C-300I | 300MHz 1M x 18 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | -40°C | 85°C | 877 K |
| GS8170LW18C-333 | 333MHz 1M x 18 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | 0°C | 70°C | 877 K |
| GS8170LW18C-333I | 333MHz 1M x 18 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | -40°C | 85°C | 877 K |
| GS8170LW36C-300 | 300MHz 512K x 36 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | 0°C | 70°C | 877 K |
| GS8170LW36C-333 | 333MHz 512K x 36 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | 0°C | 70°C | 877 K |
| P4KE170A | 400 Watt peak power transient voltage suppressor. Reverse stad-off voltage VRWM = 145.00 V. Test current IT = 1 mA | distributor | - | 2 | -55°C | 175°C | 307 K |
| SA170A | 500 Watt peak power transient voltage suppressor. Reverse stad-off voltage VRWM = 170.00 V. Test current IT = 1 mA | distributor | - | 2 | -55°C | 175°C | 313 K |
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