Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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K4E170811D-B | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 257 K |
K4E170811D-F | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung-Electronic | - | 28 | 0°C | 70°C | 257 K |
K4E170812D-B | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 257 K |
K4E170812D-F | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung-Electronic | - | 28 | 0°C | 70°C | 257 K |
K4F170811D-B | 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 226 K |
K4F170811D-F | 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. | Samsung-Electronic | - | 28 | 0°C | 70°C | 226 K |
K4F170811D-F | 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. | Samsung-Electronic | - | 28 | 0°C | 70°C | 226 K |
K4F170812D-B | 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 226 K |
S5T3170X01-D0B0 | Low power DTMF receiver | Samsung-Electronic | - | 18 | -25°C | 75°C | 140 K |
S5T3170X01-S0B0 | Low power DTMF receiver | Samsung-Electronic | - | 20 | -25°C | 75°C | 140 K |
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