| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SK1726 | N-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2062 | 3 | - | - | 81 K |
| 5962-9172601M3A | SCAN TEST DEVICES WITH OCTAL BUFFERS | Texas-Instruments | FK | 28 | -55°C | 125°C | 293 K |
| 5962-9172601M3A | SCAN TEST DEVICES WITH OCTAL BUFFERS | Texas-Instruments | FK | 28 | -55°C | 125°C | 293 K |
| CXA1726AM | Multiplier IC for Displays | Sony-Semiconductor | - | - | - | - | 192 K |
| CXA1726AS | Multiplier IC for Displays | Sony-Semiconductor | - | - | - | - | 192 K |
| SD1726 | HF SSB APPLICATIONS RF & MICROWAVE TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 82 K |
| UC1726J | ISOLATED DRIVE TRANSMITTER | Texas-Instruments | - | 18 | -55°C | 125°C | 333 K |
| UC1726J883B | ISOLATED DRIVE TRANSMITTER | Texas-Instruments | - | 18 | -55°C | 125°C | 333 K |
| UC1726SP | ISOLATED DRIVE TRANSMITTER | Texas-Instruments | - | 16 | -55°C | 125°C | 333 K |
| UPA1726G-E1 | N-channel enhancement type power MOS FET | NEC-Electronics-Inc- | - | - | - | - | 58 K |
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