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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2082-6175-302 Watt, DC-4 GHz, Fixed coaxial attenuatorM-A-COM---manufacturer-of-RF---55°C125°C226 K
ANPC-175G-P-O-SF2400-2500 MHz, Picocell antennaM-A-COM---manufacturer-of-RF----50 K
MAS1175AASM1-TIC for 10.00 - 20.00 MHz VCTCXOdistributorMSOP10-35°C85°C89 K
MAS1175ATB1IC for 10.00 - 20.00 MHz VCTCXOdistributorTested wafers--35°C85°C89 K
MRF175GU200 W, 500 MHz, N-channel broadband RF power MOSFETM-A-COM---manufacturer-of-RF-5--214 K
MRF175GV150 W, 500 MHz, N-channel broadband RF power MOSFETM-A-COM---manufacturer-of-RF-5--214 K
MRF175LU100 W, 28 V,RF power field-effect transistorM-A-COM---manufacturer-of-RF----144 K
MRF175LV100 W, 28 V,RF power field-effect transistorM-A-COM---manufacturer-of-RF----144 K
MSK5175-12TS12V, Very high current, low dropout voltage regulatordistributorTOP TAB5-40°C85°C313 K
PH1090-175L1030-1090 MHz,175 W, 250 ms pulse,avionic pulsed power transistorM-A-COM---manufacturer-of-RF----41 K
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