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| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|---|---|---|---|---|---|---|
| DS2175N | T1/CEPT Elastic Store | Dallas-Semiconductor | DIP | 16 | -40°C | 85°C | 243 K |
| DS2175S | T1/CEPT Elastic Store | Dallas-Semiconductor | SOIC | 16 | 0°C | 70°C | 243 K |
| DS2175SN | T1/CEPT Elastic Store | Dallas-Semiconductor | SOIC | 16 | -40°C | 85°C | 243 K |
| HYB314175BJ-50 | 256K x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 40 | 0°C | 70°C | 1 M |
| HYB314175BJ-55 | 256K x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 40 | 0°C | 70°C | 1 M |
| HYB314175BJ-60 | 256K x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 40 | 0°C | 70°C | 1 M |
| HYB314175BJL-50 | 256K x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 40 | 0°C | 70°C | 1 M |
| HYB314175BJL-55 | 256K x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 40 | 0°C | 70°C | 1 M |
| HYB314175BJL-60 | 256K x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 40 | 0°C | 70°C | 1 M |
| HYB514175BJ-50 | 256K x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 40 | 0°C | 70°C | 177 K |
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