Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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ES1869F | Single, mixed-signal chip; audio drive controller | distributor | PQFP | 100 | - | - | 85 K |
HI-3186PSI | 0 ohm, ARINC 429 differential line driver | distributor | SOIC | 14 | -40°C | 85°C | 428 K |
HI-3186PST | 0 ohm, ARINC 429 differential line driver | distributor | SOIC | 14 | -55°C | 125°C | 428 K |
K4R441869AM-CG6 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
K4R441869AM-CK7 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
K4R441869AN-CG6 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. | Samsung-Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | 3 M |
VSC7186TW | Quad transceiver for Gigabit ethernet. 3.3V power supply, 2.67W max dissipation | distributor | BGA | 208 | 0°C | 100°C | 219 K |
Z86E0812SSC1860 | CMOS Z8 OTP microcontroller. 12 MHz, 2 Kbyte ROM, 125 bytes RAM, 14 I/O, 3.0V to 5.5V | distributor | SOIC | 18 | 0°C | 70°C | 251 K |
Z86E0812SSC1860 | CMOS Z8 OTP microcontroller. 12 MHz, 2 Kbyte ROM, 125 bytes RAM, 14 I/O, 3.0V to 5.5V | distributor | SOIC | 18 | 0°C | 70°C | 251 K |
Z86E0812SSC1860 | CMOS Z8 OTP microcontroller. 12 MHz, 2 Kbyte ROM, 125 bytes RAM, 14 I/O, 3.0V to 5.5V | distributor | SOIC | 18 | 0°C | 70°C | 251 K |
Z86E0812SSC1866 | CMOS Z8 OTP microcontroller. 12 MHz, 2 Kbyte ROM, 125 bytes RAM, 14 I/O, 4.5V to 5.5V | distributor | SOIC | 18 | 0°C | 70°C | 251 K |
Z86E0812SSC1866 | CMOS Z8 OTP microcontroller. 12 MHz, 2 Kbyte ROM, 125 bytes RAM, 14 I/O, 4.5V to 5.5V | distributor | SOIC | 18 | 0°C | 70°C | 251 K |
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