| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SA1890 | Small signal silicon PNP transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 37 K |
| 2SD1892 | Silicon NPN triple diffusion planar type Darlington power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 55 K |
| 2SD1893 | Silicon NPN triple diffusion planar type Darlington power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 54 K |
| 2SD1894 | Silicon NPN triple diffusion planar type Darlington power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 54 K |
| 2SD1895 | Silicon NPN triple diffusion planar type Darlington power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 54 K |
| KTD1898 | NPN transistor for general purpose applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 118 K |
| LN189L | GaAlAs Infrared Light Emitting Diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 43 K |
| LN189M | GaAlAs Infrared Light Emitting Diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 36 K |
| LN189S | GaAlAs Infrared Light Emitting Diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 44 K |
| TA8189N | Quad preamplifier for double cassete tape recorder | Toshiba | - | 24 | -20°C | 75°C | 519 K |
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