| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GS8170DD18C-250 | 250MHz 1M x 18 18MB double data rate sigmaRAM SRAM | distributor | BGA | 209 | 0°C | 70°C | 825 K |
| GS8170DD18C-250I | 250MHz 1M x 18 18MB double data rate sigmaRAM SRAM | distributor | BGA | 209 | -40°C | 85°C | 825 K |
| GS8170DD18C-300 | 300MHz 1M x 18 18MB double data rate sigmaRAM SRAM | distributor | BGA | 209 | 0°C | 70°C | 825 K |
| GS8170DD18C-300I | 300MHz 1M x 18 18MB double data rate sigmaRAM SRAM | distributor | BGA | 209 | -40°C | 85°C | 825 K |
| GS8170DD18C-333 | 333MHz 1M x 18 18MB double data rate sigmaRAM SRAM | distributor | BGA | 209 | 0°C | 70°C | 825 K |
| GS8170DD18C-333I | 333MHz 1M x 18 18MB double data rate sigmaRAM SRAM | distributor | BGA | 209 | -40°C | 85°C | 825 K |
| GS8170DW18C-300 | 300MHz 1M x 18 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | 0°C | 70°C | 906 K |
| GS8170DW18C-333 | 333MHz 1M x 18 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | 0°C | 70°C | 906 K |
| PEEL18CV8P-10 | CMOS programmable electrically erasable logic device, 10 ns | distributor | DIP | 20 | 0°C | 70°C | 397 K |
| PEEL18CV8P-7 | CMOS programmable electrically erasable logic device, 7.5 ns | distributor | DIP | 20 | 0°C | 70°C | 397 K |
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