| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2EZ18D5 | 18 V, 2 W, silicon zener diode | distributor | - | 2 | -55°C | 175°C | 27 K |
| 3EZ18D5 | 18 V, 3 W, silicon zener diode | distributor | - | 2 | -55°C | 175°C | 37 K |
| GS8161Z18D-133I | 8.5ns 133MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM | distributor | BGA | 165 | -40°C | 85°C | 1 M |
| GS8161Z18D-150I | 7.5ns 150MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM | distributor | BGA | 165 | -40°C | 85°C | 1 M |
| GS8161Z18D-166I | 7ns 166MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM | distributor | BGA | 165 | -40°C | 85°C | 1 M |
| GS8161Z18D-200I | 6.5ns 200MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM | distributor | BGA | 165 | -40°C | 85°C | 1 M |
| GS8161Z18D-225I | 6ns 225MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM | distributor | BGA | 165 | -40°C | 85°C | 1 M |
| GS8161Z18D-250I | 5.5ns 225MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM | distributor | BGA | 165 | -40°C | 85°C | 1 M |
| GS816218D-225 | 6ns 225MHz 1M x 18 18MB S/DCD synchronous burst SRAM | distributor | BGA | 165 | 0°C | 70°C | 956 K |
| GS816218D-250 | 5.5ns 250MHz 1M x 18 18MB S/DCD synchronous burst SRAM | distributor | BGA | 165 | 0°C | 70°C | 956 K |
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