| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BS616LV2018DC | 70ns 16mA 2.4-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit | distributor | DICE | 48 | 0°C | 70°C | 220 K |
| BS616LV2018DI | 70ns 16mA 2.4-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit | distributor | DICE | 48 | -40°C | 85°C | 220 K |
| GS818DV18D-250I | 250MHz 1M x 18 18MB sigmaQuad SRAM | distributor | BGA | 165 | -40°C | 85°C | 663 K |
| GS818DV18D-300I | 300MHz 1M x 18 18MB sigmaQuad SRAM | distributor | BGA | 165 | -40°C | 85°C | 663 K |
| GS818DV18D-333I | 333MHz 1M x 18 18MB sigmaQuad SRAM | distributor | BGA | 165 | -40°C | 85°C | 663 K |
| TPS3838E18DBVR | Nanopower supervisory circuits, threshold voltage=1.71V | Texas-Instruments | - | 5 | -40°C | 85°C | 173 K |
| TPS3838E18DBVR | Nanopower supervisory circuits, threshold voltage=1.71V | Texas-Instruments | - | 5 | -40°C | 85°C | 173 K |
| TPS3838E18DBVR | Nanopower supervisory circuits, threshold voltage=1.71V | Texas-Instruments | - | 5 | -40°C | 85°C | 173 K |
| TPS3838E18DBVT | Nanopower supervisory circuits, threshold voltage=1.71V | Texas-Instruments | - | 5 | -40°C | 85°C | 173 K |
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