Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IC61SF51218D-9.5TQI | 9.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM | distributor | PBGA | 119 | -40°C | 85°C | 479 K |
MT58L1MY18DF-10 | 3.3V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 10ns | distributor | FBGA | 165 | 0°C | 70°C | 526 K |
MT58L1MY18DF-6 | 3.3V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 6ns | distributor | FBGA | 165 | 0°C | 70°C | 526 K |
MT58L1MY18DF-7.5 | 3.3V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 7.5ns | distributor | FBGA | 165 | 0°C | 70°C | 526 K |
MT58V1MV18DF-10 | 2.5V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 10ns | distributor | FBGA | 165 | 0°C | 70°C | 526 K |
MT58V1MV18DF-6 | 2.5V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 6ns | distributor | FBGA | 165 | 0°C | 70°C | 526 K |
MT58V1MV18DF-7.5 | 2.5V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 7.5ns | distributor | FBGA | 165 | 0°C | 70°C | 526 K |
MT58V1MV18DT-10 | 2.5V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 10ns | distributor | TQFP | 100 | 0°C | 70°C | 526 K |
MT58V1MV18DT-6 | 2.5V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 6ns | distributor | TQFP | 100 | 0°C | 70°C | 526 K |
SP8718DP | 520 MHz low current two-modulus divider 64/65 | GEC-Plessey-Semiconductors | - | 8 | -40°C | 85°C | 73 K |
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