Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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HGTG18N120BN | 54A, 1200V, NPT Series N-Channel IGBT | Fairchild-Semiconductor | - | - | - | - | 112 K |
HGTG18N120BND | 54A, 1200V, NPT Series N-Channel IGBTwith Anti-Parallel Hyperfast Diode | Fairchild-Semiconductor | - | - | - | - | 121 K |
PNP18N20E | PowerMOS transistor. Drain-source voltage 200 V. Drain current(DC) 18 A. | Philips-Semiconductors | TO220AB | 3 | -55°C | 175°C | 66 K |
PNP18N20E | PowerMOS transistor. Drain-source voltage 200 V. Drain current(DC) 18 A. | Philips-Semiconductors | TO220AB | 3 | -55°C | 175°C | 66 K |
PZM18NB | Voltage regulator diode. | Philips-Semiconductors | SOT346 | 3 | 0°C | 150°C | 75 K |
PZM18NB | Voltage regulator diode. | Philips-Semiconductors | SC59 | 3 | 0°C | 150°C | 75 K |
PZM18NB | Voltage regulator diode. | Philips-Semiconductors | SC59 | 3 | 0°C | 150°C | 75 K |
PZM18NB1 | Voltage regulator diode. | Philips-Semiconductors | SOT346 | 3 | 0°C | 150°C | 75 K |
PZM18NB2 | Voltage regulator diode. | Philips-Semiconductors | SOT346 | 3 | 0°C | 150°C | 75 K |
PZM18NB3 | Voltage regulator diode. | Philips-Semiconductors | SOT346 | 3 | 0°C | 150°C | 75 K |
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