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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
HGTG18N120BN54A, 1200V, NPT Series N-Channel IGBTFairchild-Semiconductor----112 K
HGTG18N120BND54A, 1200V, NPT Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeFairchild-Semiconductor----121 K
PNP18N20EPowerMOS transistor. Drain-source voltage 200 V. Drain current(DC) 18 A.Philips-SemiconductorsTO220AB3-55°C175°C66 K
PNP18N20EPowerMOS transistor. Drain-source voltage 200 V. Drain current(DC) 18 A.Philips-SemiconductorsTO220AB3-55°C175°C66 K
PZM18NBVoltage regulator diode.Philips-SemiconductorsSOT34630°C150°C75 K
PZM18NBVoltage regulator diode.Philips-SemiconductorsSC5930°C150°C75 K
PZM18NBVoltage regulator diode.Philips-SemiconductorsSC5930°C150°C75 K
PZM18NB1Voltage regulator diode.Philips-SemiconductorsSOT34630°C150°C75 K
PZM18NB2Voltage regulator diode.Philips-SemiconductorsSOT34630°C150°C75 K
PZM18NB3Voltage regulator diode.Philips-SemiconductorsSOT34630°C150°C75 K
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