| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTG18N120BN | 54A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 84 K |
| HGTG18N120BND | 54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 95 K |
| LA8518NM | Signal processor for cordless telephone base set | SANYO-Electric-Co--Ltd- | QFP64E | 64 | -20°C | 70°C | 560 K |
| MCX18N00A | Micro Unit CCD | Sony-Semiconductor | - | - | - | - | 210 K |
| MCX18N00B | Micro Unit CCD | Sony-Semiconductor | - | - | - | - | 210 K |
| RFM18N08 | 18.0A, 80V and 100V, 0.100 ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 38 K |
| RFM18N10 | 18.0A, 80V and 100V, 0.100 ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 38 K |
| RFP18N08 | 18.0A, 80V and 100V, 0.100 ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 38 K |
| RFP18N10 | 18.0A, 80V and 100V, 0.100 ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 38 K |
| STW18NB40 | N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 73 K |
| [1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
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