Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BS616LV2018TC | 70ns 16mA 2.4-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit | distributor | TSOP | 48 | 0°C | 70°C | 220 K |
BS616LV2018TI | 70ns 16mA 2.4-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit | distributor | TSOP | 48 | -40°C | 85°C | 220 K |
BZX84C18TS | 18V; 200mW triple surface mount zener diode array | distributor | - | 6 | -65°C | 150°C | 59 K |
GS881Z18T-100I | 100MHz 12ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM | distributor | TQFP | 100 | -40°C | 85°C | 522 K |
GS881Z18T-11I | 100MHz 11ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM | distributor | TQFP | 100 | -40°C | 85°C | 522 K |
GS881Z18T-80I | 80MHz 14ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM | distributor | TQFP | 100 | -40°C | 85°C | 522 K |
IC61SF51218T-7.5TQ | 7.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM | distributor | TQFP | 100 | 0°C | 70°C | 479 K |
IC61SF51218T-8.5TQ | 8.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM | distributor | TQFP | 100 | 0°C | 70°C | 479 K |
IC61SF51218T-9.5TQ | 9.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM | distributor | TQFP | 100 | 0°C | 70°C | 479 K |
MM3Z18T1 | 18 V, 5 mA, 200 mW, zener voltage regulator | distributor | - | 2 | -65°C | 150°C | 83 K |
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