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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2SC1968ASilicon NPN epitaxial planar type transistorMitsubishi-Electric-Corporation-Semiconductor-Group-4--132 K
FU-68PDF-V510M196B1.58m DFB-LD module with polarization maintaining fiber pigtailMitsubishi-Electric-Corporation-Semiconductor-Group-14-20°C70°C92 K
FU-68PDF-V520M196BWavelength:1606nm DFB-LD module with polarization maintaining fiber pigtailMitsubishi-Electric-Corporation-Semiconductor-Group-14-20°C70°C96 K
FU-68SDF-V802M196B1.58m DFB-LD module with singlemode fiber pigtailMitsubishi-Electric-Corporation-Semiconductor-Group-14-20°C70°C93 K
FU-68SDF-V810M196BWavelength:1606nm DFB-LD module with singlemode fiber pigtailMitsubishi-Electric-Corporation-Semiconductor-Group-14-20°C70°C91 K
M38196M1-XXXFPRAM size: 896bytes; single-chip 8-bit CMOS microcomputerMitsubishi-Electric-Corporation-Semiconductor-GroupQFP100-10°C85°C664 K
MAX196ACAIMultirange, single +5V, 12-bit DAS with 12-bit bus interfaceMaxim-Integrated-ProducsSSOP280°C70°C165 K
MAX196BCAIMultirange, single +5V, 12-bit DAS with 12-bit bus interfaceMaxim-Integrated-ProducsSSOP280°C70°C165 K
MAX4196ESAMicropower, +2.7V single-supple operation, Rail-to-Rail, precision instrumentation amplifier with shutdown. Gain +10V/V. CMRR 115db.Maxim-Integrated-ProducsSO8-40°C85°C213 K
RF2196PCBA3V, PCS linear power amplifierRF-Micro-Devices-RFMDLCC16-30°C110°C180 K
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