| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SA1965 | PNP epitaxial planar silicon transistor, muting circuit application | SANYO-Electric-Co--Ltd- | 2106A | 3 | - | - | 78 K |
| 2SA1967 | NPN triple diffused planar silicon transistor, high-voltage amp, high-voltage switching application | SANYO-Electric-Co--Ltd- | 2010C | 3 | - | - | 83 K |
| 2SA1968 | PNP epitaxial planar silicon transistor, high-voltage amp, high-voltage switching application | SANYO-Electric-Co--Ltd- | 2079B | 3 | - | - | 81 K |
| 2SA1969 | PNP epitaxial planar silicon transistor, high-frequency medium-output amplifier, medium current, ultrahigh-speed switching application | SANYO-Electric-Co--Ltd- | 2038A | 3 | - | - | 111 K |
| 2SJ196-T | P-channel MOS FET | NEC-Electronics-Inc- | - | - | - | - | 386 K |
| 2SJ196-T/JD | P-channel MOS FET | NEC-Electronics-Inc- | - | - | - | - | 386 K |
| 2SJ196-T/JM | P-channel MOS FET | NEC-Electronics-Inc- | - | - | - | - | 386 K |
| 2SJ196/JD | P-channel MOS FET | NEC-Electronics-Inc- | - | - | - | - | 386 K |
| 2SJ196/JD | P-channel MOS FET | NEC-Electronics-Inc- | - | - | - | - | 386 K |
| 2SK1961 | N-channel junction silicon FET, high-frequency low-noise amp application | SANYO-Electric-Co--Ltd- | 2019A | 3 | - | - | 128 K |
| LC895196K | ATAPI compatible CD-ROM decoder IC | SANYO-Electric-Co--Ltd- | SQFP144 | 144 | -30°C | 70°C | 144 K |
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