| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MSD1819A-RT1 | NPN silicon general puspose amplifier transistor | Motorola | - | 3 | -55°C | 150°C | 153 K |
| MSD1819A-ST1 | NPN silicon general puspose amplifier transistor | Motorola | - | 3 | -55°C | 150°C | 153 K |
| S-80719AL | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80719AL-AG-S | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80719AL-AG-T1 | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80719AL-AG-T2 | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80719AN | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80719AN-DG-S | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80719AN-DG-T1 | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80719AN-DG-T2 | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| [1] [2] [3] [4] [5] 6 [7] [8] [9] [10] |
|---|
