Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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APT1001R1BVFR | 1000V, 11A power MOS V | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 70 K |
CY7C1011BV33-12ZI | 128K x 16 static RAM, 12ns | Cypress-Semiconductor | TSOP II | 44 | -40°C | 85°C | 153 K |
CY7C1011BV33-15ZC | 128K x 16 static RAM, 15ns | Cypress-Semiconductor | TSOP II | 44 | 0°C | 70°C | 153 K |
CY7C1011BV33-15ZI | 128K x 16 static RAM, 15ns | Cypress-Semiconductor | TSOP II | 44 | -40°C | 85°C | 153 K |
LH51BV1000JY-70LL | CMOS 1K (128K x 8) static RAM | Sharp | CSP | 32 | -25°C | 85°C | 77 K |
M5M29GB161BVP | 16777216-bit CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | -20°C | 85°C | 197 K |
M5M29GT161BVP | 16777216-bit CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | -20°C | 85°C | 197 K |
M5M29GT161BVP-80 | 16777216-bit CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | -20°C | 85°C | 229 K |
ZV831BV2TA | 28 V, silicon hyperabrupt varactor diode | Zetex-Semiconductor | SOD | 2 | -55°C | 150°C | 140 K |
ZV831BV2TA | 28 V, silicon hyperabrupt varactor diode | Zetex-Semiconductor | SOD | 2 | -55°C | 150°C | 140 K |
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