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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
APT1001R1BVFR1000V, 11A power MOS VAdvanced-Power-Technology-APT-3-55°C150°C70 K
CY7C1011BV33-12ZI128K x 16 static RAM, 12nsCypress-SemiconductorTSOP II44-40°C85°C153 K
CY7C1011BV33-15ZC128K x 16 static RAM, 15nsCypress-SemiconductorTSOP II440°C70°C153 K
CY7C1011BV33-15ZI128K x 16 static RAM, 15nsCypress-SemiconductorTSOP II44-40°C85°C153 K
LH51BV1000JY-70LLCMOS 1K (128K x 8) static RAMSharpCSP32-25°C85°C77 K
M5M29GB161BVP16777216-bit CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP48-20°C85°C197 K
M5M29GT161BVP16777216-bit CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP48-20°C85°C197 K
M5M29GT161BVP-8016777216-bit CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP48-20°C85°C229 K
ZV831BV2TA28 V, silicon hyperabrupt varactor diodeZetex-SemiconductorSOD2-55°C150°C140 K
ZV831BV2TA28 V, silicon hyperabrupt varactor diodeZetex-SemiconductorSOD2-55°C150°C140 K
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