| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTD1N120BNS | 5.3A, 1200V, NPT Series N-Channel IGBT | Fairchild-Semiconductor | - | - | - | - | 97 K |
| HGTG11N120CN | 43A, 1200V, NPT Series N-Channel IGBT | Fairchild-Semiconductor | - | - | - | - | 138 K |
| HGTG11N120CND | 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Fairchild-Semiconductor | - | - | - | - | 110 K |
| JAN1N1204RA | 12A silicon power rectifier, 400V | Microsemi-Corporation | DO4 | 2 | -65°C | 150°C | 106 K |
| JAN1N1206A | 12A silicon power rectifier, 600V | Microsemi-Corporation | DO4 | 2 | -65°C | 150°C | 106 K |
| JAN1N1206RA | 12A silicon power rectifier, 600V | Microsemi-Corporation | DO4 | 2 | -65°C | 150°C | 106 K |
| JANTX1N1202A | 12A silicon power rectifier, 200V | Microsemi-Corporation | DO4 | 2 | -65°C | 150°C | 106 K |
| JANTX1N1204RA | 12A silicon power rectifier, 400V | Microsemi-Corporation | DO4 | 2 | -65°C | 150°C | 106 K |
| JANTX1N1206A | 12A silicon power rectifier, 600V | Microsemi-Corporation | DO4 | 2 | -65°C | 150°C | 106 K |
| JANTX1N1206RA | 12A silicon power rectifier, 600V | Microsemi-Corporation | DO4 | 2 | -65°C | 150°C | 106 K |
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