| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N1203C | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | - | - | - | - | 120 K |
| 1N1204C | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | - | - | - | - | 120 K |
| 1N1205C | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | - | - | - | - | 120 K |
| 1N1206C | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | - | - | - | - | 120 K |
| HGTD1N120BNS | 5.3A, 1200V, NPT Series N-Channel IGBT | Fairchild-Semiconductor | - | - | - | - | 97 K |
| HGTG11N120CN | 43A, 1200V, NPT Series N-Channel IGBT | Fairchild-Semiconductor | - | - | - | - | 138 K |
| HGTG11N120CND | 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Fairchild-Semiconductor | - | - | - | - | 110 K |
| JANTX1N1202A | 12A silicon power rectifier, 200V | Microsemi-Corporation | DO4 | 2 | -65°C | 150°C | 106 K |
| JANTX1N1206RA | 12A silicon power rectifier, 600V | Microsemi-Corporation | DO4 | 2 | -65°C | 150°C | 106 K |
| RL1N1200F | Photoflash rectifier. Max recurrent peak reverse voltage 1200V, max RMS voltage 840V, max DC blocking voltage 1200V. Max average forward current 0.5A at Ta=55degC. | distributor | - | 2 | -65°C | 175°C | 23 K |
| [1] [2] [3] [4] [5] [6] 7 [8] [9] [10] |
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