Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N4447 | Small signal switching diode. Peak reverse voltage VRM = 100 V. Maximum average rectified current IAV = 150 mA. | distributor | - | 2 | -65°C | 175°C | 47 K |
1N4447 | Small signal switching diode. Peak reverse voltage VRM = 100 V. Maximum average rectified current IAV = 150 mA. | distributor | - | 2 | -65°C | 175°C | 47 K |
1N4448 | Small signal switching diode. Reverse voltage 75 V. Average rectified current 150 mA. | distributor | - | 2 | -65°C | 175°C | 190 K |
1N4448 | 100 V, high-speed switching diode | distributor | - | 2 | - | - | 323 K |
1N4448W | Surface mount switching diode. Peak reverse voltage 100V. Maximum average forward current at Ta = 25degC.150mA | distributor | - | 2 | -55°C | 125°C | 53 K |
1N4448WS | Surface mount switching diode. Voltage 75V. Power 200mW. Peak reverse voltage 100V. | distributor | - | 2 | -55°C | 125°C | 127 K |
1N4450 | 40 V, 150 mA, Silicon epitaxial planar diode | distributor | - | 2 | - | - | 23 K |
1N4451 | 40 V, 150 mA, Silicon epitaxial planar diode | distributor | - | 2 | - | - | 23 K |
1N4453 | 30 V, 150 mA, Silicon epitaxial planar diode | distributor | - | 2 | - | - | 23 K |
1N4454 | 75 V, 150 mA, Silicon epitaxial planar diode | distributor | - | 2 | - | - | 23 K |
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