| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5529 | 0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-20% tolerance. | distributor | - | 2 | -65°C | 200°C | 243 K |
| 1N5529 | Nom zener voltage:9.1V; measured from 1000-3000Hz; low voltage avalanche zener diode; high performance: low noise, low leakage | distributor | - | - | - | - | 39 K |
| 1N5529A | 0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-10% tolerance. | distributor | - | 2 | -65°C | 200°C | 243 K |
| 1N5529B | 9.1 volt, zener diode | distributor | - | 2 | -65°C | 175°C | 99 K |
| 1N5529B | 0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-5% tolerance. | distributor | - | 2 | -65°C | 200°C | 243 K |
| 1N5529B | Low Voltage Avalanche Zener | Microsemi-Corporation | - | - | - | - | 81 K |
| 1N5529B | Low Voltage Avalanche Zener | Microsemi-Corporation | - | - | - | - | 83 K |
| 1N5529B-1 | Low Voltage Avalanche Zener | Microsemi-Corporation | - | - | - | - | 81 K |
| 1N5529BUR-1 | Low Voltage Avalanche Zener | Microsemi-Corporation | - | - | - | - | 81 K |
| 1N5529C | 0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-2% tolerance. | distributor | - | 2 | -65°C | 200°C | 243 K |
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