| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N6000B | 500 milliwatts glass silicon zener diode, zener voltage 10V | Motorola | - | 2 | -65°C | 200°C | 424 K |
| 1N6001B | 500 milliwatts glass silicon zener diode, zener voltage 11V | Motorola | - | 2 | -65°C | 200°C | 424 K |
| 1N6002B | 500 milliwatts glass silicon zener diode, zener voltage 12V | Motorola | - | 2 | -65°C | 200°C | 424 K |
| 1N6003B | 500 milliwatts glass silicon zener diode, zener voltage 13V | Motorola | - | 2 | -65°C | 200°C | 424 K |
| 1N6004B | 500 milliwatts glass silicon zener diode, zener voltage 15V | Motorola | - | 2 | -65°C | 200°C | 424 K |
| 1N6005B | 500 milliwatts glass silicon zener diode, zener voltage 16V | Motorola | - | 2 | -65°C | 200°C | 424 K |
| 1N6006B | 500 milliwatts glass silicon zener diode, zener voltage 18V | Motorola | - | 2 | -65°C | 200°C | 424 K |
| 1N6263 | 60V; schottky barrier switching diode. Guard ring construction for transient protection | distributor | - | 3 | -55°C | 125°C | 49 K |
| 1N6263W | 60V; surface mount schottky barrier switching diode. Guard ring construction for transient protection | distributor | - | 2 | -65°C | 125°C | 71 K |
| SSS1N60B | 600V, 1A N-channel MOSFET | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 852 K |
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