| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N6381 | 45.00V; 19A ;1500W peak pulse power; glass passivated junction transient voltage suppressor | distributor | - | 2 | -55°C | 175°C | 139 K |
| 1N6388 | 36.00V; 23A ;1500W peak pulse power; glass passivated junction transient voltage suppressor | distributor | - | 2 | -55°C | 175°C | 139 K |
| 1N6389 | 45.00V; 19A ;1500W peak pulse power; glass passivated junction transient voltage suppressor | distributor | - | 2 | -55°C | 175°C | 139 K |
| MK45H11N65 | Very fast CMOS 512 x 9 BiPORT FIFO, 65ns | SGS-Thomson-Microelectronics | PDIP | 28 | 0°C | 70°C | 696 K |
| MK45H11N65 | Very fast CMOS 512 x 9 BiPORT FIFO, 65ns | SGS-Thomson-Microelectronics | PSDIP | 28 | 0°C | 70°C | 696 K |
| PHP1N60 | 600 V, power MOS transistor | Philips-Semiconductors | TO | 3 | - | - | 57 K |
| PHP1N60 | 600 V, power MOS transistor | Philips-Semiconductors | TO | 3 | - | - | 57 K |
| PHP1N60E | 600 V, power MOS transistor | Philips-Semiconductors | TO | 3 | - | - | 21 K |
| PHP1N60E | 600 V, power MOS transistor | Philips-Semiconductors | TO | 3 | - | - | 21 K |
| PHX1N60E | 600 V, power MOS transistor isolated version of PHP1N60E | Philips-Semiconductors | SOT | 3 | - | - | 24 K |
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