| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AMP01NBS | 4.5-18V; 3.0/3.4mA; low noise, precision instrumentation amplifier | Analog-Devices | Die | - | - | - | 261 K |
| PZM11NB2A | 11 V, 5 mA, voltage regulator double diode | Philips-Semiconductors | SOT | 3 | -65°C | 150°C | 59 K |
| PZM11NB2A | 11 V, 5 mA, voltage regulator double diode | Philips-Semiconductors | SOT | 3 | -65°C | 150°C | 59 K |
| PZM5.1NB2A | 5.1 V, 5 mA, voltage regulator double diode | Philips-Semiconductors | SOT | 3 | -65°C | 150°C | 59 K |
| PZM9.1NB2A | 9.1 V, 5 mA, voltage regulator double diode | Philips-Semiconductors | SOT | 3 | -65°C | 150°C | 59 K |
| S1NB20 | General purpose SMT DIL bridge rectifier | Shindengen-Electric-Manufacturing-Company-Ltd- | 1N | - | - | - | 271 K |
| S1NB80 | General purpose SMT DIL bridge rectifier | Shindengen-Electric-Manufacturing-Company-Ltd- | 1N | - | - | - | 271 K |
| STD1NB80 | N-CHANNEL 800V - 16 OHM - 1A - DPAK/IPAK POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 66 K |
| STD1NB80-1 | N-CHANNEL 800V - 16 OHM - 1A - IPAK POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 56 K |
| STN1NB80 | N-CHANNEL 800V - 16 OHM - 0.2A - SOT-223 POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 87 K |
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