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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
HGT1S7N60A4DS600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast DiodeFairchild-Semiconductor----143 K
HGT1S7N60A4S600V, SMPS Series N-Channel IGBTFairchild-Semiconductor----204 K
HGT1S7N60C3DSTRANSISTOR.IGBT TO-263Fairchild-Semiconductor----197 K
LT1S73AChip LED deviceSharpDIP4-25°C85°C101 K
MH1S72CPG-1075497472-bit (1048576-word by 72-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP1680°C70°C681 K
MH1S72CPG-1275497472-bit (1048576-word by 72-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP1680°C70°C681 K
MH1S72CPG-1575497472-bit (1048576-word by 72-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP1680°C70°C681 K
RF1S70N03TRANSISTOR MOSFETFairchild-Semiconductor----588 K
RF1S70N06TRANSISTOR MOSFETFairchild-Semiconductor----90 K
RF1S70N06SMTRANSISTOR MOSFETFairchild-Semiconductor----90 K
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