| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGT1S7N60A4DS | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Fairchild-Semiconductor | - | - | - | - | 143 K |
| HGT1S7N60A4S | 600V, SMPS Series N-Channel IGBT | Fairchild-Semiconductor | - | - | - | - | 204 K |
| HGT1S7N60C3DS | TRANSISTOR.IGBT TO-263 | Fairchild-Semiconductor | - | - | - | - | 197 K |
| LT1S73A | Chip LED device | Sharp | DIP | 4 | -25°C | 85°C | 101 K |
| MH1S72CPG-10 | 75497472-bit (1048576-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 681 K |
| MH1S72CPG-12 | 75497472-bit (1048576-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 681 K |
| MH1S72CPG-15 | 75497472-bit (1048576-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 681 K |
| RF1S70N03 | TRANSISTOR MOSFET | Fairchild-Semiconductor | - | - | - | - | 588 K |
| RF1S70N06 | TRANSISTOR MOSFET | Fairchild-Semiconductor | - | - | - | - | 90 K |
| RF1S70N06SM | TRANSISTOR MOSFET | Fairchild-Semiconductor | - | - | - | - | 90 K |
| [1] 2 [3] |
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