Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IXFK21N100Q | 1000V HiPerFET power MOSFET Q-class | distributor | - | 3 | -40°C | 150°C | 98 K |
IXFX21N100Q | 1000V HiPerFET power MOSFET Q-class | distributor | ISOPLUS247 | 3 | -40°C | 150°C | 98 K |
IXTA1N100 | 1000V high voltage MOSFET | distributor | - | 3 | -55°C | 150°C | 46 K |
IXTK21N100 | 600V high voltage megaMOS FET | distributor | - | 3 | -55°C | 150°C | 137 K |
IXTN21N100 | 600V high voltage megaMOS FET | distributor | - | 4 | -55°C | 150°C | 137 K |
IXTP1N100 | 1000V high voltage MOSFET | distributor | - | 3 | -55°C | 150°C | 46 K |
OM1N100SA | 1000V; up to 6 Amp, N-channel MOSFET | distributor | - | 4 | -55°C | 150°C | 40 K |
OM1N100ST | 1000V; up to 6 Amp, N-channel MOSFET | distributor | - | 4 | -55°C | 150°C | 40 K |
R3111N101C-TR | Low voltage detector. Detector threshold (-Vdet) 1.0V. Output type: CMOS. Standard taping specification TR | distributor | - | 5 | -40°C | 85°C | 205 K |
RL1N1000F | Photoflash rectifier. Max recurrent peak reverse voltage 1000V, max RMS voltage 700V, max DC blocking voltage 1000V. Max average forward current 0.5A at Ta=55degC. | distributor | - | 2 | -65°C | 175°C | 23 K |
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