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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
1N5333B3.3 V, 5 Watt surmetic 40 silicon zener diodedistributor-2-65°C200°C428 K
1N5391Silicon rectifier. Max recurrent peak reverse voltage 50V. Max RMS voltagr 35V. Max DC blocking voltage 50V. Current 1.5AWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-2-65°C175°C534 K
1N5392Silicon rectifier. Max reccurrent peak reverse voltage 100V. Max RMS voltage 70V. Max DC blocking voltage 100V. Current 1.5AWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-2-65°C175°C534 K
1N5393Silicon rectifier. Max recurrent peak reverse voltage 200V. Max RMS voltage 140V. Max DC blocking voltage 200V. Current 1.5AWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-2-65°C175°C534 K
1N5395Silicon rectifier. Max recurrent peak reverse voltage 400V. Max RMS voltage 280V. Max DC blocking voltage 400V. Current 1.5AWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-2-65°C175°C534 K
1N5397Silicon rectifier. Max recurrent peak reverse voltage 600V. Max RMS voltage 420V. MAX DC blocking voltage 600V. Current 1.5AWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-2-65°C175°C534 K
1N5398Silicon rectifier. Max reccurrent peak reverse voltage 800V. Max RMS voltage 560V. Max DC blocking voltage 800V. Current 1.5AWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-2-65°C175°C534 K
1N5399Silicon rectifier. Max recurrent peak reverse voltage 1000V. Max RMS voltage 700V. Max DC blocking voltage 1000V. Current 1.5AWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-2-65°C175°C534 K
R3111N531C-TRLow voltage detector. Detector threshold (-Vdet) 5.3V. Output type: CMOS. Standard taping specification TRdistributor-5-40°C85°C205 K
R3111N531C-TRLow voltage detector. Detector threshold (-Vdet) 5.3V. Output type: CMOS. Standard taping specification TRdistributor-5-40°C85°C205 K
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