| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5383B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 150V, Izt = 8.0mA | distributor | - | 2 | -55°C | 150°C | 306 K |
| 1N5383B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 150V, Izt = 8.0mA | distributor | - | 2 | -55°C | 150°C | 306 K |
| 1N5383B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 150V, Izt = 8.0mA | distributor | - | 2 | -55°C | 150°C | 306 K |
| 1N5384B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 160V, Izt = 8.0mA | distributor | - | 2 | -55°C | 150°C | 306 K |
| 1N5384B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 160V, Izt = 8.0mA | distributor | - | 2 | -55°C | 150°C | 306 K |
| 1N5385B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 170V, Izt = 8.0mA | distributor | - | 2 | -55°C | 150°C | 306 K |
| 1N5386B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 180V, Izt = 5.0mA | distributor | - | 2 | -55°C | 150°C | 306 K |
| 1N5387B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 190V, Izt = 5.0mA | distributor | - | 2 | -55°C | 150°C | 306 K |
| 1N5388B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 200V, Izt = 5.0mA | distributor | - | 2 | -55°C | 150°C | 306 K |
| 1N5391 | Plastic silicon rectifier. Max reccurent peak reverse voltage 50V. Max average forward rectified current 1.5A. | distributor | - | 2 | -55°C | 150°C | 47 K |
| 1N5392 | Plastic silicon rectifier. Max reccurent peak reverse voltage 100V. Max average forward rectified current 1.5A. | distributor | - | 2 | -55°C | 150°C | 47 K |
| 1N5393 | Plastic silicon rectifier. Max reccurent peak reverse voltage 200V. Max average forward rectified current 1.5A. | distributor | - | 2 | -55°C | 150°C | 47 K |
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